Datasheet

Electrical characteristics STOTG04E
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3 Electrical characteristics
Table 6. Electrical characteristics
Characteristics measured over recommended operating conditions unless otherwise is
noted. All typical values are referred to T
A
= 25°C, V
IF
= 1.8V, V
BAT
= 3.3V, R
S
= 20Ω,
C
EXT
= 220nF, C
T
= 4.7µF and C
TRM
= 1µF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
IF
Digital Part Supply Current
Active mode (1,2) 0.6 1.6 mA
Power down mode 1 µA
I
BAT
Operating Supply Current
Transceiver current while
transmitting and receiving (1, 2)
4.5 7
mA
Charge pump current, I
LOAD
= 8mA
17 25
Power down mode (4) 1 µA
LOGIC INPUTS AND OUTPUTS
V
OH
HIGH level output voltage
I
OH
= -100µA V
IF
-0.15
V
I
OH
= -2mA V
IF
-0.40
V
V
OL
LOW level output voltage
I
OL
= 100µA
0.15 V
I
OL
= 2mA
0.40 V
V
IH
HIGH level input voltage
0.7V
IF
V
V
IL
LOW level input voltage
0.3V
IF
V
I
LKG
Input leakage current -1 1 µA
I
OZ
Off-state output current -5 5 µA
V
BUS
V
BUS
V
BUS
output voltage I
LOAD
= 8mA
4.4 4.9 5.25 V
V
BUS_LKG
V
BUS
leakage voltage
No Load 3 200 mV
V
BUS_RIP
V
BUS
output ripple I
LOAD
= 8mA, C
T
= 4.7µF
30 60 mV
f
CP
Charge-pump switching
frequency (2)
0.5 0.8 1.5 MHz
R
VBUS
V
BUS
input impedance
40 76 100 kΩ
I
VBUS
Maximum V
BUS
source current C
EXT
= 220 nF, V
BUS
> 4.4V
20 35 mA
V
BUS_VLD
V
BUS
valid comparator
threshold
Low to high transition 4.40
V
High to low transition 4.40
V
SES_VLD
Session valid comparator
threshold for both A and B
devices
Low to high transition 0.8 2.0
V
High to low transition 0.8 2.0
R
VBUS_PU
V
BUS
charge pull-up resistance
281 640 Ω
R
VBUS_PD
V
BUS
discharge pull-down
resistance
656 1260 Ω
ID
V
ID_BIAS
ID pin bias voltage
R
CP_ID
= 140kΩ, V
BAT
≤ 5V
1.3 1.9 3.0 V
R
ID_PU
ID pin pull-up resistance 70 105 130 kΩ
R
ID_GND
ID line short resistance to detect id_gnd state 10 Ω
R
ID_FLOAT
ID line short resistance to detect id_float state 800 kΩ