Datasheet

R
m
: Notional resistance (see crystal specification)
L
m
: Notional inductance (see crystal specification)
C
m
: Notional capacitance (see crystal specification)
Co: Shunt capacitance (see crystal specification)
C
L1
= C
L2
= C: Grounded external capacitance
g
m
>> g
mcrit
Internal clock sources and timing characteristics10.3.4
Subject to general operating conditions for V
DD
and T
A
.
High speed internal RC oscillator (HSI)
Table 36: HSI oscillator characteristics
UnitMaxTypMinConditionsParameterSymbol
MHz-16-
Frequencyf
HSI
%
1.0
(3)
--
User-trimmed with
CLK_HSITRIMR register for
Accuracy of HSI
oscillator
ACC
HSI
given V
DD
and T
A
conditions
(1)
1--1
V
DD
= 5 V, T
A
= 25°C
(2)
Accuracy of HSI
oscillator (factory
2.0--2.0
V
DD
= 5 V,
calibrated)
25 °C ≤ T
A
≤ 85 °C
3.0
(2)
-
-3.0
(2)
2.95 ≤ V
DD
≤ 5.5 V,
-40 °C ≤ T
A
≤ 125 °C
μs
1.0
(3)
--
HSI oscillator
wakeup time
t
su(HSI)
including
calibration
μA
250
(2)
170-
HSI oscillator
power
I
DD(HSI)
consumption
(1)
Refer to application note.
(2)
Data based on characterization results, not tested in production.
(3)
Guaranteed by design, not tested in production.
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Electrical characteristicsSTM8S903K3 STM8S903F3