Datasheet

UnitMaxTypMin
(1)
ConditionsParameterSymbol
ms3.33.0Fast programming time for 1 block
(128 bytes)
ms3.33.0Erase time for 1 block (128 bytes)t
erase
cycles10 kT
A
= +85 °CErase/write cycles
(2)
(program
memory)
N
RW
1.0M300 kT
A
= +125 ° CErase/write cycles(data memory)
(2)
years20T
RET
= 55° CData retention (program memory)
after 10k erase/write cycles at T
A
= +85 °C
t
RET
20T
RET
= 55° CData retention (data memory) after
10k erase/write cycles at T
A
= +85
°C
1.0T
RET
= 85° CData retention (data memory) after
300 k erase/write cyclesat T
A
=
+125 °C
mA2.0Supply current (Flash
programming or erasing for 1 to
128 bytes)
I
DD
(1)
Data based on characterization results, not tested in production.
(2)
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes
even when a write/erase operation addresses a single byte.
I/O port pin characteristics10.3.6
General characteristics
Subject to general operating conditions for V
DD
and T
A
unless otherwise specified. All unused
pins must be kept at a fixed voltage: using the output mode of the I/O for example or an
external pull-up or pull-down resistor.
Table 38: I/O static characteristics
UnitMaxTypMinConditionsParameterSymbol
V
0.3 x V
DD
-0.3
V
DD
= 5 VInput low level
voltage
V
IL
79/124DocID14771 Rev 12
Electrical characteristicsSTM8S105xx