Datasheet

UnitMax.
(1)
RatingsSymbol
±4Injected current on NRST pinI
INJ(PIN)
(4) (5)
±4Injected current on OSCIN pin
±4Injected current on any other pin
(6)
±20Total injected current (sum of all I/O and control pins)
(6)
ΣI
INJ(PIN)
(4)
(1)
Data based on characterization results, not tested in production.
(2)
All power (V
DD
, V
DDIO
, V
DDA
) and ground (V
SS
, V
SSIO
, V
SSA
) pins must always be
connected to the external supply.
(3)
I/O pins used simultaneously for high current source/sink must be uniformly spaced
around the package between the V
DDIO
/V
SSIO
pins.
(4)
I
INJ(PIN)
must never be exceeded. This is implicitly insured if V
IN
maximum is respected.
If V
IN
maximum cannot be respected, the injection current must be limited externally to the
I
INJ(PIN)
value. A positive injection is induced by V
IN
>V
DD
while a negative injection is induced
by V
IN
<V
SS
. For true open-drain pads, there is no positive injection current, and the
corresponding V
IN
maximum must always be respected
(5)
Negative injection disturbs the analog performance of the device. See note in I2C interface
characteristics.
(6)
When several inputs are submitted to a current injection, the maximum ΣI
INJ(PIN)
is the
absolute sum of the positive and negative injected currents (instantaneous values). These
results are based on characterization with ΣI
INJ(PIN)
maximum current injection on four I/O
port pins of the device.
Table 18: Thermal characteristics
UnitValueRatingsSymbol
°C-65 to 150Storage temperature rangeT
STG
150Maximum junction temperatureT
J
Operating conditions10.3
The device must be used in operating conditions that respect the parameters in the table
below. In addition, full account must be taken of all physical capacitor characteristics and
tolerances.
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STM8S105xxElectrical characteristics