Datasheet

UnitMaxTyp
Min
(1)
ConditionsParameterSymbol
--1
T
RET
= 85°C
Data retention (data
memory) after 300k
erase/write cycles at
T
A
= +125 °C
mA-2-
Supply current (Flash
programming or erasing
I
DD
for 1 to 128 bytes)
(1)
Data based on characterization results, not tested in production.
(2)
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes
even when a write/erase operation addresses a single byte.
I/O port pin characteristics10.3.6
General characteristics
Subject to general operating conditions for V
DD
and T
A
unless otherwise specified. All unused
pins must be kept at a fixed voltage: using the output mode of the I/O for example or an
external pull-up or pull-down resistor.
Table 38: I/O static characteristics
UnitMaxTypMinConditionsParameterSymbol
V
0.3 x
V
DD
--0.3
V
DD
= 5 V
Input low level voltage
V
IL
V
DD
+
0.3
-
0.7 x
V
DD
Input high level voltage
V
IH
mV-700-
Hysteresis
(1)
V
hys
kΩ805530
V
DD
= 5 V, V
IN
= V
SS
Pull-up resistor
R
pu
ns
35
(3)
--
Fast I/Os
Load = 50 pF
Rise and fall time
(10 % - 90 %)
t
R
, t
F
125
(3)
--
Standard and high sink
I/Os
Load = 50 pF
20
(3)
--
Fast I/Os
71/117DocID15441 Rev 9
Electrical characteristicsSTM8S103K3 STM8S103F3 STM8S103F2