Datasheet
3. End point correlation line
E
T
= Total unadjusted error: maximum deviation between the actual and the ideal transfer
curves.
E
O
= Offset error: deviation between the first actual transition and the first ideal one.
E
G
= Gain error: deviation between the last ideal transition and the last actual one.
E
D
= Differential linearity error: maximum deviation between actual steps and the ideal
one.
E
L
= Integral linearity error: maximum deviation between any actual transition and the end
point correlation line.
Figure 44: Typical application with ADC
STM8
10-bit A/D
conversion
R
AIN
C
AIN
V
AIN
AINx
V
DD
V
T
0.6 V
V
T
0.6 V
I
L
± 1 µA
C
ADC
EMC characteristics10.3.11
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)10.3.11.1
While executing a simple application (toggling 2 LEDs through I/O ports), the product is
stressed by two electromagnetic events until a failure occurs (indicated by the LEDs).
•
FESD: Functional electrostatic discharge (positive and negative) is applied on all pins of
the device until a functional disturbance occurs. This test conforms with the IEC 61000-4-2
standard.
•
FTB: A burst of fast transient voltage (positive and negative) is applied to V
DD
and V
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms with
the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the table
below based on the EMS levels and classes defined in application note AN1709 (EMC design
guide for STMicrocontrollers).
Designing hardened software to avoid noise problems10.3.11.2
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
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STM8S103K3 STM8S103F3 STM8S103F2Electrical characteristics