Datasheet

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STM8L151xx, STM8L152xx Electrical parameters
112
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: human body model and charge device model. This test conforms to the
JESD22-A114A/A115A standard.
Static latch-up
 LU: 3 complementary static tests are required on 6 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
refer to the application note AN1181.
Table 59. EMI data
(1)
1. Not tested in production.
Symbol Parameter Conditions
Monitored
frequency band
Max vs.
Unit
16 MHz
S
EMI
Peak level
V
DD
3.6 V,
T
A
+25 °C,
LQFP32
conforming to
IEC61967-2
0.1 MHz to 30 MHz -3
dBV30 MHz to 130 MHz 9
130 MHz to 1 GHz 4
SAE EMI Level 2 -
Table 60. ESD absolute maximum ratings
Symbol Ratings Conditions
Maximum
value
(1)
1. Data based on characterization results, not tested in production.
Unit
V
ESD(HBM)
Electrostatic discharge voltage
(human body model)
T
A
+25 °C
2000
V
V
ESD(CDM)
Electrostatic discharge voltage
(charge device model)
500
Table 61. Electrical sensitivities
Symbol Parameter Class
LU Static latch-up class II