Datasheet

DocID15962 Rev 13 83/131
STM8L151xx, STM8L152xx Electrical parameters
112
Low speed internal RC oscillator (LSI)
In the following table, data is based on characterization results, not tested in production.
Figure 20. Typical LSI frequency vs. V
DD
Table 34. LSI oscillator characteristics
Symbol
Parameter
(1)
1. V
DD
= 1.65 V to 3.6 V, T
A
= -40 to 125 °C unless otherwise specified.
Conditions
(1)
Min Typ Max Unit
f
LSI
Frequency 26 38 56 kHz
t
su(LSI)
LSI oscillator wakeup time - - 200
(2)
2. Guaranteed by design, not tested in production.
µs
I
DD(LSI)
LSI oscillator frequency
drift
(3)
3. This is a deviation for an individual part, once the initial frequency has been measured.
0 °C T
A
 85 °C -12 - 11 %
25
27
29
31
33
35
37
39
41
43
45
1.6 2.1 2.6 3.1 3.6
V
DD
[V]
LSI frequency [kHz]
-40°C
25°C
90°C
130°C