Datasheet

STM8L151x2, STM8L151x3 Electrical parameters
Doc ID 018780 Rev 4 73/112
Table 34. I/O static characteristics
Symbol Parameter
Conditions
(1)
Min
Typ
Max Unit
V
IL
Input low level voltage
(2)
Input voltage on true open-drain
pins (PC0 and PC1)
V
SS
-0.3 0.3 x V
DD
V
Input voltage on any other pin
V
SS
-0.3 0.3 x V
DD
V
IH
Input high level voltage
(2)
Input voltage on true open-drain
pins (PC0 and PC1)
with V
DD
< 2 V
0.70 x V
DD
5.2 V
Input voltage on true open-drain
pins (PC0 and PC1)
with V
DD
≥ 2 V
5.5
Input voltage on any other pin
0.70 x V
DD
V
DD
+0.3
V
hys
Schmitt trigger voltage
hysteresis
(3)
I/Os 200
mV
True open drain I/Os 200
I
lkg
Input leakage current
(4)
V
SS
≤ V
IN
≤ V
DD
High sink I/Os
--50
(5)
nA
V
SS
≤ V
IN
≤ V
DD
True open drain I/Os
- - 200
(5)
V
SS
≤ V
IN
≤ V
DD
PA0 with high sink LED driver
capability
- - 200
(5)
R
PU
Weak pull-up equivalent
resistor
(2)(6)
V
IN
=V
SS
30 45 60 kΩ
C
IO
I/O pin capacitance 5 pF
1. V
DD
= 3.0 V, T
A
= -40 to 125 °C unless otherwise specified.
2. Data based on characterization results, not tested in production.
3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
4. The max. value may be exceeded if negative current is injected on adjacent pins.
5. Not tested in production.
6. R
PU
pull-up equivalent resistor based on a resistive transistor(corresponding I
PU
current characteristics described in
Figure 23).