Datasheet

STM8L151x2, STM8L151x3 Electrical parameters
Doc ID 018780 Rev 4 71/112
7.3.5 Memory characteristics
T
A
= -40 to 125 °C unless otherwise specified.
Flash memory
Table 31. RAM and hardware registers
Symbol Parameter Conditions Min Typ Max Unit
V
RM
Data retention mode
(1)
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
Halt mode (or Reset) 1.65 V
Table 32. Flash program and data EEPROM memory
Symbol Parameter Conditions Min Typ
Max
(1)
Unit
V
DD
Operating voltage
(all modes, read/write/erase)
f
SYSCLK
= 16 MHz 1.65 3.6 V
t
prog
Programming time for 1 or 64 bytes (block)
erase/write cycles (on programmed byte)
6ms
Programming time for 1 to 64 bytes (block)
write cycles (on erased byte)
3ms
I
prog
Programming/ erasing consumption
T
A
=+25 °C, V
DD
= 3.0 V
0.7 mA
T
A
=+25 °C, V
DD
= 1.8 V
t
RET
(2)
Data retention (program memory) after 10000
erase/write cycles at T
A
= –40 to +85 °C
(3 and 6 suffix)
T
RET
= +85 °C 30
(1)
years
Data retention (program memory) after 10000
erase/write cycles at T
A
= –40 to +125 °C
(3 suffix)
T
RET
= +125 °C 5
(1)
Data retention (data memory) after 300000
erase/write cycles at T
A
= –40 to +85 °C
(3 and 6 suffix)
T
RET
= +85 °C 30
(1)
Data retention (data memory) after 300000
erase/write cycles at T
A
= –40 to +125 °C
(3 suffix)
T
RET
= +125 °C 5
(1)
N
RW
(3)
Erase/write cycles (program memory) T
A
= –40 to +85 °C
(3 and 6 suffix),
T
A
= –40 to +105 °C
(3 suffix) or
T
A
= –40 to +125 °C
(3 suffix)
10
(1)
kcycles
Erase/write cycles (data memory)
300
(1)
(4)
1. Data based on characterization results, not tested in production.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
addresses a single byte.
4. Data based on characterization performed on the whole data memory.