Datasheet

STM8L151x2, STM8L151x3 Electrical parameters
Doc ID 018780 Rev 4 69/112
Figure 18. Typical HSI frequency vs V
DD
Low speed internal RC oscillator (LSI)
In the following table, data is based on characterization results, not tested in production.
Table 30. LSI oscillator characteristics
Symbol
Parameter
(1)
1. V
DD
= 1.65 V to 3.6 V, T
A
= -40 to 125 °C unless otherwise specified.
Conditions
(1)
Min Typ Max Unit
f
LSI
Frequency 26 38 56 kHz
t
su(LSI)
LSI oscillator wakeup time 200
(2)
2. Guaranteed by design, not tested in production.
µs
I
DD(LSI)
LSI oscillator frequency
drift
(3)
3. This is a deviation for an individual part, once the initial frequency has been measured.
0 °C ≤ T
A
≤ 85 °C -12 11 %
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
1.65 1.8 1.95 2.1 2.25 2.4 2.55 2.7 2.85 3 3.15 3.3 3.45 3.6
V
DD
[V]
HSI frequency [MHz]
-40°C
25°C
90°C
130°C