Datasheet

Electrical parameters STM8L151x2, STM8L151x3
58/112 Doc ID 018780 Rev 4
Figure 13. Typ. I
DD(Wait)
vs. V
DD
,f
CPU
=16MHz
1)
1. Typical current consumption measured with code executed from Flash memory.
2. For temperature range 3.
3. Flash is configured in I
DDQ
mode in Wait mode by setting the EPM or WAITM bit in the Flash_CR1 register.
4. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption
(I
DD HSE
) must be added. Refer to Table 27.
5. Tested in production.
6. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE consumption
(I
DD HSE
) must be added. Refer to Table 28.
500
550
600
650
700
750
800
850
900
950
1000
1.6 2.1 2.6 3.1 3.6
V
DD
[V]
IDD(WAIT)HSI [μA]
-40°C
25°C
90°C
130°C
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