Datasheet

Electrical parameters STM8L151x2, STM8L151x3
56/112 Doc ID 018780 Rev 4
Figure 12. Typ. I
DD(RUN)
vs. V
DD
,f
CPU
= 16MHz
1. Typical current consumption measured with code executed from RAM
4. The run from RAM consumption can be approximated with the linear formula:
I
DD
(run_from_RAM) = Freq * 90 µA/MHz + 380 µA
5. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption
(I
DD HSE
) must be added. Refer to Table 27.
6. Tested in production.
7. The run from Flash consumption can be approximated with the linear formula:
I
DD
(run_from_Flash) = Freq * 195 µA/MHz + 440 µA
8. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE consumption
(I
DD LSE
) must be added. Refer to Table 28.
1.50
1.75
2.00
2.25
2.50
2.75
3.00
1.6 2.1 2.6 3.1 3.6
V
DD
[V]
IDD(RUN)HSI [mA]
-40°C
25°C
90°C
130°C
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