Datasheet

Electrical parameters STM8L15xx8, STM8L15xR6
94/134 DocID17943 Rev 6
Flash memory
Table 36. Flash program and data EEPROM memory
Symbol Parameter Conditions Min. Typ.
Max.
(1)
Unit
V
DD
Operating voltage
(all modes, read/write/erase)
f
SYSCLK
= 16 MHz 1.65 3.6 V
t
prog
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
6
ms
Programming time for 1 to 128 bytes (block)
write cycles (on erased byte)
3
I
prog
Programming/ erasing consumption
T
A
=+25 °C, V
DD
= 3.0 V
0.7 mA
T
A
=+25 °C, V
DD
= 1.8 V
t
RET
(2)
Data retention (program memory) after 10000
erase/write cycles at T
A
=−40 τ ο +85 °C
(6 suffix)
T
RET
=+85 °C 30
(1)
years
Data retention (program memory) after 10000
erase/write cycles at T
A
=−40 τ ο +125 °C
(3 suffix)
T
RET
=+125 °C 5
(1)
Data retention (data memory) after 300000
erase/write cycles at T
A
=−40 τ ο +85 °C
(6 suffix)
T
RET
=+85 °C 30
(1)
Data retention (data memory) after 300000
erase/write cycles at T
A
=−40 τ ο +125 °C
(3 suffix)
T
RET
=+125 °C 5
(1)
N
RW
(3)
Erase/write cycles (program memory) T
A
=−40 τ ο +85 °C
(6 suffix),
T
A
=−40 τ ο +105 °C
(7 suffix) or
T
A
=−40 τ ο +125 °C
(3 suffix)
10
(1)
kcycles
Erase/write cycles (data memory)
300
(1)
(4)
1. Data based on characterization results, not tested in production.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
addresses a single byte.
4. Data based on characterization performed on the whole data memory.