Datasheet

Electrical characteristics STM8AF52/62xx, STM8AF51/61xx
70/110 Doc ID 14395 Rev 9
Table 39. Data memory
Symbol Parameter Condition Min Max Unit
T
WE
Temperature for writing and erasing — -40 150 °C
N
WE
Data memory endurance
(1)
(erase/write cycles)
1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a
write/erase operation addresses a single byte.
T
A
= 25 °C 300 k —
cycles
T
A
= -40°C to 125 °C 100 k
(2)
2. More information on the relationship between data retention time and number of write/erase cycles is
available in a separate technical document.
—
t
RET
Data retention time
T
A
= 25 °C 40
(2)(3)
3. Retention time for 256B of data memory after up to 1000 cycles at 125 °C.
—
years
T
A
= 55 °C 20
(2)(3)
—