Datasheet

STM8AF52/62xx, STM8AF51/61xx Electrical characteristics
Doc ID 14395 Rev 9 69/110
10.3.5 Memory characteristics
Flash program memory/data EEPROM memory
General conditions: T
A
= -40 °C to 150 °C.
Table 37. Flash program memory/data EEPROM memory
Symbol Parameter Conditions Min
(1)
1. Guaranteed by characterization, not tested in production.
Typ Max Unit
V
DD
Operating voltage
(all modes, execution/write/erase)
f
CPU
is 16 to 24 MHz
with 1 ws
f
CPU
is 0 to 16 MHz
with 0 ws
3.0 — 5.5
V
V
DD
Operating voltage (code execution)
f
CPU
is 16 to 24 MHz
with 1 ws
f
CPU
is 0 to 16 MHz
with 0 ws
2.6 — 5.5
t
prog
Standard programming time
(including erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
——66.6
ms
Fast programming time for 1 block
(128 bytes)
——33.3
t
erase
Erase time for 1 block (128 bytes) — — 3 3.3 ms
Table 38. Flash program memory
Symbol Parameter Condition Min Max Unit
T
WE
Temperature for writing and erasing — -40 150 °C
N
WE
Flash program memory endurance
(erase/write cycles)
(1)
1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a
write/erase operation addresses a single byte.
T
A
= 25 °C 1000 — cycles
t
RET
Data retention time
T
A
= 25 °C 40 —
years
T
A
= 55 °C 20 —