Datasheet

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STM32L15xCC STM32L15xRC STM32L15xUC STM32L15xVC Electrical characteristics
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Flash memory and data EEPROM
Table 36. Flash memory and data EEPROM characteristics
Symbol Parameter Conditions Min Typ Max
(1)
1. Guaranteed by design, not tested in production.
Unit
V
DD
Operating voltage
Read / Write / Erase
-1.65-3.6V
t
prog
Programming time for
word or half-page
Erasing - 3.28 3.94
ms
Programming - 3.28 3.94
I
DD
Average current during
the whole programming /
erase operation
T
A
25 °C, V
DD
= 3.6 V
- 600 900 µA
Maximum current (peak)
during the whole
programming / erase
operation
-1.52.5mA
Table 37. Flash memory and data EEPROM endurance and retention
Symbol Parameter Conditions
Value
Unit
Min
(1)
1. Based on characterization not tested in production.
Typ Max
N
CYC
(2)
Cycling (erase / write)
Program memory
T
A
-40°C to 
105 °C
10
--
kcycles
Cycling (erase / write)
EEPROM data memory
300
--
t
RET
(2)
2. Characterization is done according to JEDEC JESD22-A117.
Data retention (program memory) after
10 kcycles at T
A
= 85 °C
T
RET
= +85 °C
30 - -
years
Data retention (EEPROM data memory)
after 300 kcycles at T
A
= 85 °C
30 - -
Data retention (program memory) after
10 kcycles at T
A
= 105 °C
T
RET
= +105 °C
10 - -
Data retention (EEPROM data memory)
after 300 kcycles at T
A
= 105 °C
10 - -