Datasheet

DocID17659 Rev 9 77/131
STM32L151x6/8/B, STM32L152x6/8/B Electrical characteristics
105
6.3.9 Memory characteristics
The characteristics are given at T
A
= -40 to 105 °C unless otherwise specified.
RAM memory
Flash memory and data EEPROM
Table 34. RAM and hardware registers
Symbol Parameter Conditions Min Typ Max Unit
VRM Data retention mode
(1)
1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware
registers (only in Stop mode).
STOP mode (or RESET) 1.65 - - V
Table 35. Flash memory and data EEPROM characteristics
Symbol Parameter Conditions Min Typ Max
(1)
1. Guaranteed by design, not tested in production.
Unit
V
DD
Operating voltage
Read / Write / Erase
-1.65-3.6V
t
prog
Programming time for
word or half-page
Erasing - 3.28 3.94
ms
Programming - 3.28 3.94
I
DD
Average current during
whole program/erase
operation
T
A
= 25 °C, V
DD
= 3.6 V
-300- µA
Maximum current (peak)
during program/erase
operation
-1.52.5mA