Datasheet

Electrical characteristics STM32L151x6/8/B, STM32L152x6/8/B
58/131 DocID17659 Rev 9
Table 18. Current consumption in Run mode, code with data processing running from RAM
Symbol Parameter Conditions f
HCLK
Typ
Max
(1)
Unit
55 °C 85 °C 105 °C
I
DD (Run
from
RAM)
Supply current
in Run mode,
code executed
from RAM,
Flash switched
off
f
HSE
= f
HCLK
up to 16 MHz,
included
f
HSE
= f
HCLK
/2
above 16 MHz
(PLL ON)
(2)
Range 3,
V
CORE
=1.2 V
VOS[1:0] = 11
1 MHz 200 300 300 300
µA2 MHz 380 500 500 500
4 MHz 720 860 860 860
(3)
Range 2,
V
CORE
=1.5 V
VOS[1:0] = 10
4 MHz 0.9 1 1 1
mA
8 MHz 1.65 2 2 2
16 MHz 3.2 3.7 3.7 3.7
Range 1,
V
CORE
=1.8 V
VOS[1:0] = 01
8 MHz 2 2.5 2.5 2.5
16 MHz 4 4.5 4.5 4.5
32 MHz 7.7 8.5 8.5 8.5
HSI clock source
(16 MHz)
Range 2,
V
CORE
=1.5 V
VOS[1:0] = 10
16 MHz 3.3 3.8 3.8 3.8
Range 1,
V
CORE
=1.8 V
VOS[1:0] = 01
32 MHz 7.8 9.2 9.2 9.2
MSI clock, 65 kHz
Range 3,
V
CORE
=1.2 V
VOS[1:0] = 11
65 kHz 40 60 60 80
µAMSI clock, 524 kHz 524 kHz 110 140 140 160
MSI clock, 4.2 MHz 4.2 MHz 700 800 800 820
1. Based on characterization, not tested in production, unless otherwise specified.
2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).
3. Tested in production.