Datasheet

Electrical characteristics STM32L151x6/8/B, STM32L152x6/8/B
80/131 DocID17659 Rev 9
6.3.11 Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
• A supply overvoltage is applied to each power supply pin
• A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
6.3.12 I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below V
SS
or
above V
DD
(for standard pins) should be avoided during normal product operation.
However, in order to give an indication of the robustness of the microcontroller in cases
when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Table 39. ESD absolute maximum ratings
Symbol Ratings Conditions Class
Maximum
value
(1)
1. Based on characterization results, not tested in production.
Unit
V
ESD(HBM)
Electrostatic discharge
voltage (human body model)
T
A
= +25 °C, conforming to
JESD22-A114
2 2000
V
V
ESD(CDM)
Electrostatic discharge
voltage (charge device
model)
T
A
= +25 °C, conforming to
ANSI/ESD STM5.3.1
II 500
Table 40. Electrical sensitivities
Symbol Parameter Conditions Class
LU Static latch-up class T
A
= +105 °C conforming to JESD78A II level A