Datasheet

Electrical characteristics STM32L100C6, STM32L100R8/RB
84/102 DocID024295 Rev 1
f
TRIG
External trigger frequency
Regular sequencer
12-bit conversions Tconv+1 1/f
ADC
6/8/10-bit conversions Tconv 1/f
ADC
f
TRIG
External trigger frequency
Injected sequencer
12-bit conversions Tconv+2 1/f
ADC
6/8/10-bit conversions Tconv+1 1/f
ADC
R
AIN
External input impedance 50 kΩ
t
lat
Injection trigger conversion
latency
f
ADC
= 16 MHz 219 281 ns
3.5 4.5 1/f
ADC
t
latr
Regular trigger conversion
latency
f
ADC
= 16 MHz 156 219 ns
2.5 3.5 1/f
ADC
t
STAB
Power-up time 3.5 µs
1. The current consumption through VDDA is composed of two parameters:
- one constant (max 1300 µA)
- one variable (max 400 µA), only during sampling time + 2 first conversion pulses.
So, peak consumption is 1300+400 = 1700 µA and average consumption is 1300 + [(4 sampling + 2) /16] x
400 = 1450 µA at 1Msps
2. V
SSA
must be tied to ground.
Table 52. ADC characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
Table 53. ADC accuracy
(1)(2)
Symbol Parameter Test conditions Min
(3)
Typ Max
(3)
Unit
ET Total unadjusted error
2.4 V ≤ V
DDA
≤ 3.6 V
f
ADC
= 8 MHz, R
AIN
= 50 Ω
T
A
= -40 to 85 ° C
-24
LSB
EO Offset error - 1 2
EG Gain error - 1.5 3.5
ED Differential linearity error - 1 2
EL Integral linearity error - 1.7 3
ENOB Effective number of bits
2.4 V ≤
V
DDA
≤ 3.6 V
f
ADC
= 16 MHz, R
AIN
= 50 Ω
T
A
= -40 to 85 ° C
1 kHz ≤
F
input
≤ 100 kHz
9.2 10 - bits
SINAD
Signal-to-noise and
distorsion ratio
57.5 62 -
dB
SNR Signal-to-noise ratio 57.5 62 -
THD Total harmonic distorsion -74 -75 -
ET Total unadjusted error
1.8 V ≤
V
DDA
≤ 2.4 V
f
ADC
= 4 MHz, R
AIN
= 50 Ω
T
A
= -40 to 85 ° C
23
LSB
EO Offset error 1 1.5
EG Gain error 1.5 2
ED Differential linearity error 1 2
EL Integral linearity error 1 1.5
1. ADC DC accuracy values are measured after internal calibration.