Datasheet

STM32L100C6, STM32L100R8/RB Electrical characteristics
DocID024295 Rev 1 67/102
6.3.8 Memory characteristics
The characteristics are given at T
A
= -40 to 85 °C unless otherwise specified.
RAM memory
Table 32. RAM and hardware registers
Flash memory and data EEPROM
Symbol Parameter Conditions Min Typ Max Unit
VRM Data retention mode
(1)
1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware
registers (only in Stop mode).
STOP mode (or RESET) 1.8 V
Table 33. Flash memory and data EEPROM characteristics
Symbol Parameter Conditions Min Typ Max
(1)
1. Guaranteed by design, not tested in production.
Unit
V
DD
Operating voltage
Read / Write / Erase
1.8 3.6 V
t
prog
Programming time for
word or half-page
Erasing 3.28 3.94
ms
Programming 3.28 3.94
I
DD
Average current during
whole programme/erase
operation
T
A
= 25 °C, V
DD
= 3.6 V
300 µA
Maximum current (peak)
during programme/erase
operation
1.5 2.5 mA