Datasheet

Electrical characteristics STM32L100C6, STM32L100R8/RB
64/102 DocID024295 Rev 1
6.3.6 Internal clock source characteristics
The parameters given in the following table are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in Table 12.
High-speed internal (HSI) RC oscillator
Low-speed internal (LSI) RC oscillator
Table 28. HSI oscillator characteristics
Symbol Parameter Conditions Min Typ Max Unit
f
HSI
Frequency V
DD
= 3.0 V 16 MHz
TRIM
(1)(2)
1. The trimming step differs depending on the trimming code. It is usually negative on the codes which are
multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0).
HSI user-trimmed
resolution
Trimming code is not a multiple of 16 ± 0.4 0.7 %
Trimming code is a multiple of 16 ± 1.5 %
ACC
HSI
(2)
2. Based on characterization, not tested in production.
V
DDA
= 1.8 V to 3.6 V
T
A
= -40 to 85 °C
-10 +10 %
t
SU(HSI)
(2)
HSI oscillator
startup time
3.7 6 µs
I
DD(HSI)
(2)
HSI oscillator
power consumption
100 140 µA
Table 29. LSI oscillator characteristics
Symbol Parameter Min Typ Max Unit
f
LSI
(1)
1. Tested in production.
LSI frequency 26 38 56 kHz
D
LSI
(2)
2. This is a deviation for an individual part, once the initial frequency has been measured.
LSI oscillator frequency drift
0°C ≤ T
A
≤ 85°C
-10 4 %
t
su(LSI)
(3)
3. Guaranteed by design, not tested in production.
LSI oscillator startup time 200 µs
I
DD(LSI)
(3)
LSI oscillator power consumption 400 510 nA