Datasheet

Electrical characteristics STM32L100C6, STM32L100R8/RB
50/102 DocID024295 Rev 1
Table 17. Current consumption in Sleep mode
Symbol Parameter Conditions f
HCLK
Typ
Max
(1)
Unit
55 °C 85 °C
I
DD
(Sleep)
Supply
current in
Sleep
mode, code
executed
from RAM,
Flash
switched
OFF
f
HSE
= f
HCLK
up to
16 MHz included,
f
HSE
= f
HCLK
/2 above
16 MHz (PLL ON)
(2)
Range 3, V
CORE
=1.2
V VOS[1:0] = 11
1 MHz 80 140 140
µA
2 MHz 150 210 210
4 MHz 280 330 330
Range 2, V
CORE
=1.5
V VOS[1:0] = 10
4 MHz 280 400 400
8 MHz 450 550 550
16 MHz 900 1050 1050
Range 1, V
CORE
=1.8
V VOS[1:0] = 01
8 MHz 550 650 650
16 MHz 1050 1200 1200
32 MHz 2300 2500 2500
HSI clock source (16
MHz)
Range 2, V
CORE
=1.5
V VOS[1:0] = 10
16 MHz 1000 1100 1100
Range 1, V
CORE
=1.8
V VOS[1:0] = 01
32 MHz 2300 2500 2500
MSI clock, 65 kHz
Range 3, V
CORE
=1.2
V VOS[1:0] = 11
65 kHz 30 50 50
MSI clock, 524 kHz 524 kHz 50 70 70
MSI clock, 4.2 MHz 4.2 MHz 200 240 240
Supply
current in
Sleep
mode, code
executed
from Flash
f
HSE
= f
HCLK
up to
16 MHz included,
f
HSE
= f
HCLK
/2 above
16 MHz (PLL ON)
(2)
Range 3, V
CORE
=1.2
V VOS[1:0] = 11
1 MHz 80 140 140
µA
2 MHz 150 210 210
4 MHz 290 350 350
Range 2, V
CORE
=1.5
V VOS[1:0] = 10
4 MHz 300 400 400
8 MHz 500 600 600
16 MHz 1000 1100 1100
Range 1, V
CORE
=1.8
V VOS[1:0] = 01
8 MHz 550 650 650
16 MHz 1050 1200 1200
32 MHz 2300 2500 2500
HSI clock source (16
MHz)
Range 2, V
CORE
=1.5
V VOS[1:0] = 10
16 MHz 1000 1100 1100
Range 1, V
CORE
=1.8
V VOS[1:0] = 01
32 MHz 2300 2500 2500
I
DD
(Sleep)
Supply
current in
Sleep
mode, code
executed
from Flash
MSI clock, 65 kHz
Range 3, V
CORE
=1.2V
VOS[1:0] = 11
65 kHz 40 70 70
µA
MSI clock, 524 kHz 524 kHz 60 90 90
MSI clock, 4.2 MHz 4.2 MHz 210 250 250
1. Based on characterization, not tested in production, unless otherwise specified.
2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register)