Datasheet

STM32L100C6, STM32L100R8/RB Electrical characteristics
DocID024295 Rev 1 49/102
Table 16. Current consumption in Run mode, code with data processing running from RAM
Symbol Parameter Conditions f
HCLK
Typ
Max
(1)
Unit
55 °C 85 °C
I
DD (Run
from RAM)
Supply current in
Run mode, code
executed from
RAM, Flash
switched off
f
HSE
= f
HCLK
up to 8 MHz,
included
f
HSE
= f
HCLK
/2 above
8 MHz
(PLL ON)
(2)
Range 3,
V
CORE
=1.2 V
VOS[1:0] = 11
1 MHz 200 300 300
µA2 MHz 380 500 500
4 MHz 720 860 860
Range 2,
V
CORE
=1.5 V
VOS[1:0] = 10
4 MHz 0.9 1 1
mA
8 MHz 1.65 2 2
16 MHz 3.2 3.7 3.7
Range 1,
V
CORE
=1.8 V
VOS[1:0] = 01
8 MHz 2 2.5 2.5
16 MHz 4 4.5 4.5
32 MHz 7.7 8.5 8.5
HSI clock source (16
MHz)
Range 2,
V
CORE
=1.5 V
VOS[1:0] = 10
16 MHz 3.3 3.8 3.8
Range 1,
V
CORE
=1.8 V
VOS[1:0] = 01
32 MHz 7.8 9.2 9.2
MSI clock, 65 kHz
Range 3,
V
CORE
=1.2 V
VOS[1:0] = 11
65 kHz 40 60 60
µAMSI clock, 524 kHz 524 kHz 110 140 140
MSI clock, 4.2 MHz 4.2 MHz 700 800 800
1. Based on characterization, not tested in production, unless otherwise specified.
2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).