Datasheet

Electrical characteristics STM32L100C6, STM32L100R8/RB
46/102 DocID024295 Rev 1
6.3.3 Embedded internal reference voltage
The parameters given in the following table are based on characterization results, unless
otherwise specified.
V
hyst
Hysteresis voltage
BOR0 threshold 40
mV
All BOR and PVD thresholds
excepting BOR0
100
1. Guaranteed by characterization, not tested in production.
Table 13. Embedded reset and power control block characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
Table 14. Embedded internal reference voltage
Symbol Parameter Conditions Min
Typ
Max Unit
V
REFINT out
(1)
Internal reference voltage – 40 °C < T
J
< +105 °C 1.202 1.224 1.242 V
I
REFINT
Internal reference current
consumption
1.4 2.3 µA
T
VREFINT
Internal reference startup time 2 3 ms
V
VREF_MEAS
V
DDA
voltage during V
REFINT
factory measure
2.99 3 3.01 V
A
VREF_MEAS
Accuracy of factory-measured
V
REF
value
(2)
Including uncertainties
due to ADC and V
DDA
values
±5 mV
T
Coeff
(3)
Temperature coefficient
–40 °C < T
J
< +105 °C 20 50
ppm/°C
0 °C < T
J
< +50 °C 20
A
Coeff
(3)
Long-term stability 1000 hours, T= 25 °C 1000 ppm
VDDCoeff
(3)
Voltage coefficient 3.0 V < V
DDA
< 3.6 V 2000 ppm/V
T
S_vrefint
(3)(4)
ADC sampling time when
reading the internal reference
voltage
510 µs
T
ADC_BUF
(3)
Startup time of reference voltage
buffer for ADC
10 µs
I
BUF_ADC
(3)
Consumption of reference
voltage buffer for ADC
13.5 25 µA
I
VREF_OUT
(3)
VREF_OUT output current
(5)
1µA
C
VREF_OUT
(3)
VREF_OUT output load 50 pF
I
LPBUF
(3)
Consumption of reference
voltage buffer for VREF_OUT
and COMP
730 1200 nA
V
REFINT_DIV1
(3)
1/4 reference voltage 24 25 26
%
V
REFINT
V
REFINT_DIV2
(3)
1/2 reference voltage 49 50 51
V
REFINT_DIV3
(3)
3/4 reference voltage 74 75 76