Datasheet

DocID022152 Rev 4 105/185
STM32F405xx, STM32F407xx Electrical characteristics
t
ERASE64KB
Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
- 1200 2400
ms
Program/erase parallelism
(PSIZE) = x 16
- 700 1400
Program/erase parallelism
(PSIZE) = x 32
- 550 1100
t
ERASE128KB
Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-24
s
Program/erase parallelism
(PSIZE) = x 16
-1.32.6
Program/erase parallelism
(PSIZE) = x 32
-12
t
ME
Mass erase time
Program/erase parallelism
(PSIZE) = x 8
-1632
s
Program/erase parallelism
(PSIZE) = x 16
-1122
Program/erase parallelism
(PSIZE) = x 32
-816
V
prog
Programming voltage
32-bit program operation 2.7 - 3.6 V
16-bit program operation 2.1 - 3.6 V
8-bit program operation 1.8 - 3.6 V
1. Based on characterization, not tested in production.
2. The maximum programming time is measured after 100K erase operations.
Table 39. Flash memory programming (continued)
Symbol Parameter Conditions Min
(1)
Typ Max
(1)
Unit