Datasheet

Electrical characteristics STM32F405xx, STM32F407xx
100/185 DocID022152 Rev 4
Low-speed internal (LSI) RC oscillator
Figure 34. ACC
LSI
versus temperature
5.3.10 PLL characteristics
The parameters given in Table 35 and Table 36 are derived from tests performed under
temperature and V
DD
supply voltage conditions summarized in Table 14.
1. V
DD
= 3.3 V, T
A
= –40 to 105 °C unless otherwise specified.
2. Based on characterization, not tested in production.
3. Guaranteed by design, not tested in production.
Table 34. LSI oscillator characteristics
(1)
1. V
DD
= 3 V, T
A
= –40 to 105 °C unless otherwise specified.
Symbol Parameter Min Typ Max Unit
f
LSI
(2)
2. Based on characterization, not tested in production.
Frequency 17 32 47 kHz
t
su(LSI)
(3)
3. Guaranteed by design, not tested in production.
LSI oscillator startup time - 15 40 µs
I
DD(LSI)
(3)
LSI oscillator power consumption - 0.4 0.6 µA
MS19013V1
-40
-30
-20
-10
0
10
20
30
40
50
-45-35-25-15-5 5 152535455565758595105
Nor mali zed devi ati on (%)
Temperat ure (°C)
max
avg
min