Datasheet

Electrical characteristics STM32F303xB STM32F303xC
80/133 DocID023353 Rev 7
6.3.8 Internal clock source characteristics
The parameters given in Table 42 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 22.
High-speed internal (HSI) RC oscillator
Figure 17. HSI oscillator accuracy characterization results
1. The above curves are based on characterisation results, not tested in production.
Table 42. HSI oscillator characteristics
(1)
1. V
DDA
= 3.3 V, T
A
= –40 to 105 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
f
HSI
Frequency - 8 - MHz
TRIM HSI user trimming step - - 1
(2)
2. Guaranteed by design, not tested in production.
%
DuCy
(HSI)
Duty cycle 45
(2)
-55
(2)
%
ACC
HSI
Accuracy of the HSI
oscillator (factory
calibrated)
T
A
= –40 to 105 °C –3.8
(3)
3. Data based on characterization results, not tested in production.
-4.6
(3)
%
T
A
= –10 to 85 °C –2.9
(3)
-2.9
(3)
%
T
A
= 0 to 70 °C - - - %
T
A
= 25 °C –1 - 1 %
t
su(HSI)
HSI oscillator startup
time
1
(2)
-2
(2)
µs
I
DD(HSI)
HSI oscillator power
consumption
- 80 100
(2)
µA
MS30985V2
-5%
-4%
-3%
-2%
-1%
0%
1%
2%
3%
4%
5%
-40 -20 0 20 40 60 80 100 120
MAX
MIN
TA [°C]
ACC
HSI