Datasheet

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STM32F303xB STM32F303xC Electrical characteristics
118
Table 25. Programmable voltage detector characteristics
Symbol Parameter Conditions Min
(1)
1. Data based on characterization results only, not tested in production.
Typ Max
(1)
Unit
V
PVD0
PVD threshold 0
Rising edge 2.1 2.18 2.26
V
Falling edge 2 2.08 2.16
V
PVD1
PVD threshold 1
Rising edge 2.19 2.28 2.37
Falling edge 2.09 2.18 2.27
V
PVD2
PVD threshold 2
Rising edge 2.28 2.38 2.48
Falling edge 2.18 2.28 2.38
V
PVD3
PVD threshold 3
Rising edge 2.38 2.48 2.58
Falling edge 2.28 2.38 2.48
V
PVD4
PVD threshold 4
Rising edge 2.47 2.58 2.69
Falling edge 2.37 2.48 2.59
V
PVD5
PVD threshold 5
Rising edge 2.57 2.68 2.79
Falling edge 2.47 2.58 2.69
V
PVD6
PVD threshold 6
Rising edge 2.66 2.78 2.9
Falling edge 2.56 2.68 2.8
V
PVD7
PVD threshold 7
Rising edge 2.76 2.88 3
Falling edge 2.66 2.78 2.9
V
PVDhyst
(2)
2. Guaranteed by design, not tested in production.
PVD hysteresis - 100 - mV
IDD(PVD)
PVD current
consumption
- 0.15 0.26 µA