Datasheet

Electrical characteristics STM32F20xxx
134/178 DocID15818 Rev 11
Figure 59. Asynchronous multiplexed PSRAM/NOR write waveforms
Table 75. Asynchronous multiplexed PSRAM/NOR write timings
(1)(2)
1. C
L
= 30 pF.
2. Based on characterization, not tested in production.
Symbol Parameter Min Max Unit
t
w(NE)
FSMC_NE low time 4T
HCLK
-1 4T
HCLK
+1 ns
t
v(NWE_NE)
FSMC_NEx low to FSMC_NWE low T
HCLK
- 1 T
HCLK
ns
t
w(NWE)
FSMC_NWE low tim e 2T
HCLK
2T
HCLK
+1 ns
t
h(NE_NWE)
FSMC_NWE high to FSMC_NE high hold time T
HCLK
- 1 - ns
t
v(A_NE)
FSMC_NEx low to FSMC_A valid - 0 ns
t
v(NADV_NE)
FSMC_NEx low to FSMC_NADV low 1 2 ns
t
w(NADV)
FSMC_NADV low time T
HCLK
– 2 T
HCLK
+ 2 ns
t
h(AD_NADV)
FSMC_AD(adress) valid hold time after
FSMC_NADV high)
T
HCLK
-ns
t
h(A_NWE)
Address hold time after FSMC_NWE high T
HCLK
– 0.5 - ns
t
h(BL_NWE)
FSMC_BL hold time after FSMC_NWE high T
HCLK
- 1 - ns
t
v(BL_NE)
FSMC_NEx low to FSMC_BL valid - 0.5 ns
t
v(Data_NADV)
FSMC_NADV high to Data valid - T
HCLK
+2 ns
t
h(Data_NWE)
Data hold time after FSMC_NWE high T
HCLK
– 0.5 - ns
NBL
Data
FSMC_NEx
FSMC_NBL[1:0]
FSMC_
AD[15:0]
t
v(BL_NE)
t
h(Data_NWE)
FSMC_NOE
Address
FSMC_A[25:16]
t
v(A_NE)
t
w(NWE)
FSMC_NWE
t
v(NWE_NE)
t
h(NE_NWE)
t
h(A_NWE)
t
h(BL_NWE)
t
v(A_NE)
t
w(NE)
ai14891B
Address
FSMC_NADV
t
v(NADV_NE)
t
w(NADV)
t
v(Data_NADV)
t
h(AD_NADV)