Datasheet

STM32F103xF, STM32F103xG Electrical characteristics
Doc ID 16554 Rev 3 43/120
5.3.4 Embedded reference voltage
The parameters given in Ta bl e 13 are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in Table 10.
5.3.5 Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 11: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to Dhrystone 2.1 code.
Maximum current consumption
The MCU is placed under the following conditions:
● All I/O pins are in input mode with a static value at V
DD
or V
SS
(no load)
● All peripherals are disabled except when explicitly mentioned
● The Flash memory access time is adjusted to the f
HCLK
frequency (0 wait state from 0
to 24 MHz, 1 wait state from 24 to 48 MHz and 2 wait states above)
● Prefetch in ON (reminder: this bit must be set before clock setting and bus prescaling)
● When the peripherals are enabled f
PCLK1
= f
HCLK
/2, f
PCLK2
= f
HCLK
The parameters given in Ta bl e 14, Ta b l e 15 and Table 16 are derived from tests performed
under ambient temperature and V
DD
supply voltage conditions summarized in Tabl e 10.
Table 13. Embedded internal reference voltage
Symbol Parameter Conditions Min
Typ
Max Unit
V
REFINT
Internal reference voltage
–40 °C < T
A
< +105 °C 1.16 1.20 1.26 V
–40 °C < T
A
< +85 °C 1.16 1.20 1.24 V
T
S_vrefint
(1)
1. Shortest sampling time can be determined in the application by multiple iterations.
ADC sampling time when
reading the internal reference
voltage
-5.117.1
(2)
2. Guaranteed by design, not tested in production.
µs
V
RERINT
(2)
Internal reference voltage
spread over the temperature
range
V
DD
= 3 V ±10 mV - - 10 mV
T
Coeff
(2)
Temperature coefficient - - 100 ppm/°C