Datasheet

Electrical characteristics STM32F103x8, STM32F103xB
58/105 DocID13587 Rev 16
Table 29. Flash memory endurance and data retention
5.3.10 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
 Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
 FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
DD
and
V
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 30. They are based on the EMS levels and classes
defined in application note AN1709.
I
DD
Supply current
Read mode
f
HCLK
= 72 MHz with 2 wait
states, V
DD
= 3.3 V
--20
mA
Write / Erase modes
f
HCLK
= 72 MHz, V
DD
= 3.3 V
--5
Power-down mode / Halt,
V
DD
= 3.0 to 3.6 V
--50µA
V
prog
Programming voltage 2 - 3.6 V
1. Guaranteed by design, not tested in production.
Symbol Parameter Conditions
Value
Unit
Min
(1)
1. Based on characterization, not tested in production.
Typ Max
N
END
Endurance
T
A
= –40 to +85 °C (6 suffix versions)
T
A
= –40 to +105 °C (7 suffix versions)
10
- - kcycles
t
RET
Data retention
1 kcycle
(2)
at T
A
= 85 °C
2. Cycling performed over the whole temperature range.
30 - -
Years1 kcycle
(2)
at T
A
= 105 °C 10 - -
10 kcycles
(2)
at T
A
= 55 °C 20 - -
Table 28. Flash memory characteristics (continued)
Symbol Parameter Conditions Min
(1)
Typ Max
(1)
Unit