Datasheet
Electrical characteristics STM32F103xF, STM32F103xG
84/120 Doc ID 16554 Rev 3
5.3.14 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 49 are derived from tests
performed under the conditions summarized in Table 10. All I/Os are CMOS and TTL
compliant.
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in
Figure 40 and Figure 41 for standard I/Os, and
in Figure 42 and Figure 43 for 5 V tolerant I/Os.
Table 49. I/O static characteristics
Symbol Parameter Conditions Min Typ
Max Unit
V
IL
Standard IO input low
level voltage
–0.3 -
0.28*(V
DD
-2
V)+0.8 V
V
IO FT
(1)
input low level
voltage
–0.3 -
0.32*(V
DD
-2
V)+0.75 V
V
V
IH
Standard IO input high
level voltage
0.41*(V
DD
-2
V)+1.3 V
-V
DD
+0.3 V
IO FT
(1)
input high level
voltage
V
DD
> 2 V
0.42*(V
DD
-2
V)+1 V
-
5.5
V
V
DD
≤ 2 V 5.2
V
hys
Standard IO Schmitt
trigger voltage
hysteresis
(2)
200 - - mV
IO FT Schmitt trigger
voltage hysteresis
(2)
5% V
DD
(3) -
-mV
I
lkg
Input leakage current
(4)
V
SS
≤ V
IN
≤ V
DD
Standard I/Os
--±1
µA
V
IN
= 5 V, I/O FT - - 3
R
PU
Weak pull-up equivalent
resistor
(5)
V
IN
= V
SS
30 40 50 kΩ
R
PD
Weak pull-down
equivalent resistor
(5)
V
IN
= V
DD
30 40 50 kΩ
C
IO
I/O pin capacitance - 5 - pF
1. FT = Five-volt tolerant. In order to sustain a voltage higher than V
DD
+0.3 the internal pull-up/pull-down resistors must be
disabled.
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production.
3. With a minimum of 100 mV.
4. Leakage could be higher than max. if negative current is injected on adjacent pins.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
MOS/NMOS contribution
to the series resistance is minimum (~10% order).