Datasheet

Electrical characteristics STM32F103xC, STM32F103xD, STM32F103xE
68/130 Doc ID 14611 Rev 8
Figure 27. Asynchronous multiplexed PSRAM/NOR write waveforms
Table 34. Asynchronous multiplexed PSRAM/NOR write timings
(1)(2)
1. C
L
= 15 pF.
2. Based on characterization, not tested in production.
Symbol Parameter Min Max Unit
t
w(NE)
FSMC_NE low time 5t
HCLK
– 1 5t
HCLK
+ 2 ns
t
v(NWE_NE)
FSMC_NEx low to FSMC_NWE low 2t
HCLK
2t
HCLK
+ 1 ns
t
w(NWE)
FSMC_NWE low time 2t
HCLK
– 1 2t
HCLK
+ 2 ns
t
h(NE_NWE)
FSMC_NWE high to FSMC_NE high hold time t
HCLK
– 1 ns
t
v(A_NE)
FSMC_NEx low to FSMC_A valid 7 ns
t
v(NADV_NE)
FSMC_NEx low to FSMC_NADV low 3 5 ns
t
w(NADV)
FSMC_NADV low time t
HCLK
– 1 t
HCLK
+ 1 ns
t
h(AD_NADV)
FSMC_AD (address) valid hold time after
FSMC_NADV high
t
HCLK
– 3 ns
t
h(A_NWE)
Address hold time after FSMC_NWE high 4t
HCLK
ns
t
v(BL_NE)
FSMC_NEx low to FSMC_BL valid 1.6 ns
t
h(BL_NWE)
FSMC_BL hold time after FSMC_NWE high t
HCLK
– 1.5 ns
t
v(Data_NADV)
FSMC_NADV high to Data valid t
HCLK
+ 1.5 ns
t
h(Data_NWE)
Data hold time after FSMC_NWE high t
HCLK
– 5 ns
NBL
Data
FSMC_NEx
FSMC_NBL[1:0]
FSMC_
AD[15:0]
t
v(BL_NE)
t
h(Data_NWE)
FSMC_NOE
Address
FSMC_A[25:16]
t
v(A_NE)
t
w(NWE)
FSMC_NWE
t
v(NWE_NE)
t
h(NE_NWE)
t
h(A_NWE)
t
h(BL_NWE)
t
v(A_NE)
t
w(NE)
ai14891B
Address
FSMC_NADV
t
v(NADV_NE)
t
w(NADV)
t
v(Data_NADV)
t
h(AD_NADV)