Datasheet

Electrical characteristics STM32F103x4, STM32F103x6
52/90 Doc ID 15060 Rev 6
Table 29. Flash memory endurance and data retention
5.3.10 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
● Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
● FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
DD
and
V
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Ta ble 3 0. They are based on the EMS levels and classes
defined in application note AN1709.
I
DD
Supply current
Read mode
f
HCLK
= 72 MHz with 2 wait
states, V
DD
= 3.3 V
20 mA
Write / Erase modes
f
HCLK
= 72 MHz, V
DD
= 3.3 V
5mA
Power-down mode / Halt,
V
DD
= 3.0 to 3.6 V
50 µA
V
prog
Programming voltage 2 3.6 V
1. Guaranteed by design, not tested in production.
Symbol Parameter Conditions
Value
Unit
Min
(1)
1. Based on characterization, not tested in production.
Typ Max
N
END
Endurance
T
A
= –40 to +85 °C (6 suffix versions)
T
A
= –40 to +105 °C (7 suffix versions)
10
kcycles
t
RET
Data retention
1 kcycle
(2)
at T
A
= 85 °C
2. Cycling performed over the whole temperature range.
30
Years1 kcycle
(2)
at T
A
= 105 °C 10
10 kcycles
(2)
at T
A
= 55 °C 20
Table 28. Flash memory characteristics (continued)
Symbol Parameter Conditions Min
(1)
Typ Max
(1)
Unit