Datasheet

STM32F103x4, STM32F103x6 Electrical characteristics
Doc ID 15060 Rev 6 35/90
5.3.4 Embedded reference voltage
The parameters given in Ta ble 1 2 are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in Tabl e 9.
5.3.5 Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 12: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to Dhrystone 2.1 code.
Maximum current consumption
The MCU is placed under the following conditions:
● All I/O pins are in input mode with a static value at V
DD
or V
SS
(no load)
● All peripherals are disabled except when explicitly mentioned
● The Flash memory access time is adjusted to the f
HCLK
frequency (0 wait state from 0
to 24 MHz, 1 wait state from 24 to 48 MHz and 2 wait states above)
● Prefetch in ON (reminder: this bit must be set before clock setting and bus prescaling)
● When the peripherals are enabled f
PCLK1
= f
HCLK
/2, f
PCLK2
= f
HCLK
The parameters given in Ta ble 1 3, Ta bl e 1 4 and Ta bl e 15 are derived from tests performed
under ambient temperature and V
DD
supply voltage conditions summarized in Table 9 .
Table 12. Embedded internal reference voltage
Symbol Parameter Conditions Min
Typ
Max Unit
V
REFINT
Internal reference voltage
–40 °C < T
A
< +105 °C 1.16 1.20 1.26 V
–40 °C < T
A
< +85 °C 1.16 1.20 1.24 V
T
S_vrefint
(1)
1. Shortest sampling time can be determined in the application by multiple iterations.
ADC sampling time when
reading the internal reference
voltage
5.1
17.1
(2)
2. Guaranteed by design, not tested in production.
µs
V
RERINT
(2)
Internal reference voltage
spread over the temperature
range
V
DD
= 3 V ±10 mV 10 mV
T
Coeff
(2)
Temperature coefficient 100 ppm/°C