Datasheet

DocID15056 Rev 5 67/80
STM32F102x8, STM32F102xB Electrical characteristics
79
Table 46. R
AIN
max for f
ADC
= 12 MHz
(1)
1. Data guaranteed by design, not tested in production.
T
s
(cycles) t
S
(µs) R
AIN
max (kΩ)
1.5 0.13 0.4
7.5 0.63 5.9
13.5 1.13 11.4
28.5 2.38 25.2
41.5 3.46 37.2
55.5 4.63 50
71.5 5.96 NA
239.5 19.96 NA
Table 47. ADC accuracy - limited test conditions
(1)
1. ADC DC accuracy values are measured after internal calibration.
Symbol Parameter Test conditions Typ Max
(2)
2. Based on characterization, not tested in production.
Unit
ET Total unadjusted error
f
PCLK2
= 48 MHz,
f
ADC
= 12 MHz, R
AIN
< 10 kΩ,
V
DDA
= 3 V to 3.6 V
T
A
= 25 °C
Measurements made after
ADC calibration
±1.3 ±2
LSB
EO Offset error ±1 ±1.5
EG Gain error ±0.5 ±1.5
ED Differential linearity error ±0.7 ±1
EL Integral linearity error ±0.8 ±1.5
Table 48. ADC accuracy
(1) (2) (3)
1. ADC DC accuracy values are measured after internal calibration.
2. Better performance could be achieved in restricted V
DD
, frequency and temperature ranges.
3. ADC accuracy vs. negative injection current: Injecting a negative current on any analog input pins should
be avoided as this significantly reduces the accuracy of the conversion being performed on another analog
input. It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially
inject negative currents.
Any positive injection current within the limits specified for I
INJ(PIN)
and ΣI
INJ(PIN)
in Section 5.3.13 does not
affect the ADC accuracy.
Symbol Parameter Test conditions Typ Max
(4)
4. Based on characterization, not tested in production.
Unit
ET Total unadjusted error
f
PCLK2
= 48 MHz,
f
ADC
= 12 MHz, R
AIN
< 10 kΩ,
V
DDA
= 2.4 V to 3.6 V
Measurements made after
ADC calibration
±2 ±5
LSB
EO Offset error ±1.5 ±2.5
EG Gain error ±1.5 ±3
ED Differential linearity error ±1 ±2
EL Integral linearity error ±1.5 ±3