Datasheet

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STM32F102x8, STM32F102xB Electrical characteristics
79
low-speed internal (LSI) RC oscillator
Wakeup time from low-power mode
The wakeup times given in Table 26 is measured on a wakeup phase with a 8-MHz HSI RC
oscillator. The clock source used to wake up the device depends from the current operating
mode:
• Stop or Standby mode: the clock source is the RC oscillator
• Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and V
DD
supply
voltage conditions summarized in Table 8.
5.3.8 PLL characteristics
The parameters given in Table 27 are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in Table 8.
2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the
ST website www.st.com.
3. Guaranteed by design, not tested in production.
4. Based on characterization, not tested in production.
5. The actual frequency of HSI oscillator may be impacted by a reflow, but does not drift out of the specified
range.
Table 24. LSI oscillator characteristics
(1)
1. V
DD
= 3 V, T
A
= −40 to 85 °C unless otherwise specified.
Symbol Parameter Min
(2)
2. Based on characterization, not tested in production.
Typ Max Unit
f
LSI
Frequency 30 40 60 kHz
t
su(LSI)
(3)
3. Guaranteed by design, not tested in production.
LSI oscillator startup time 85 µs
I
DD(LSI)
(3)
LSI oscillator power consumption 0.65 1.2 µA
Table 25. Low-power mode wakeup timings
Symbol Parameter Typ Unit
t
WUSLEEP
(1)
1. The wakeup times are measured from the wakeup event to the point at which the user application code
reads the first instruction.
Wakeup from Sleep mode 1.8 µs
t
WUSTOP
(1)
Wakeup from Stop mode (regulator in run mode) 3.6
µs
Wakeup from Stop mode (regulator in low-power
mode)
5.4
t
WUSTDBY
(1)
Wakeup from Standby mode 50 µs