Datasheet

Electrical characteristics STM32F101xF, STM32F101xG
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5.3.14 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Ta ble 4 6 are derived from tests
performed under the conditions summarized in Tab l e 1 0 . All I/Os are CMOS and TTL
compliant.
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 39 and Figure 40 for standard I/Os, and
in Figure 41 and Figure 42 for 5 V tolerant I/Os.
Table 46. I/O static characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
IL
Standard IO input low
level voltage
–0.3 0.28*(V
DD
-2 V)+0.8 V V
IO FT
(1)
input low level
voltage
–0.3 0.32*(V
DD
-2V)+0.75 V V
V
IH
Standard IO input high
level voltage
0.41*(V
DD
-2 V)+1.3 V V
DD
+0.3 V
IO FT
(1)
input high level
voltage
V
DD
> 2 V
0.42*(V
DD
-2 V)+1 V
5.5
V
V
DD
 2 V 5.2
V
hys
Standard IO Schmitt
trigger voltage
hysteresis
(2)
200 mV
IO FT Schmitt trigger
voltage hysteresis
(2)
5% V
DD
(3)
mV
I
lkg
Input leakage current
(4)
V
SS
 V
IN
 V
DD
Standard I/Os
1
µA
V
IN
= 5 V
I/O FT
3
R
PU
Weak pull-up equivalent
resistor
(5)
V
IN
V
SS
30 40 50 k
R
PD
Weak pull-down
equivalent resistor
(5)
V
IN
V
DD
30 40 50 k
C
IO
I/O pin capacitance 5 pF
1. FT = Five-volt tolerant. In order to sustain a voltage higher than V
DD
+0.5 the internal pull-up/pull-down resistors must be
disabled.
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production.
3. With a minimum of 100 mV.
4. Leakage could be higher than max. if negative current is injected on adjacent pins.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution
to the series resistance is minimum (~10% order).