Datasheet

Electrical characteristics STM32F101xF, STM32F101xG
60/108 Doc ID 17143 Rev 2
Figure 23. Asynchronous multiplexed NOR/PSRAM read waveforms
t
v(NADV_NE)
FSMC_NEx low to FSMC_NADV low 5.5 ns
t
w(NADV)
FSMC_NADV low time T
HCLK
+ 1.5 ns
1. C
L
= 15 pF.
2. Preliminary values.
Table 33. Asynchronous multiplexed NOR/PSRAM read timings
(1)(2)
Symbol Parameter Min Max Unit
t
w(NE)
FSMC_NE low time 7T
HCLK
– 2 7T
HCLK
+ 2 ns
t
v(NOE_NE)
FSMC_NEx low to FSMC_NOE low 3T
HCLK
– 0.5 3T
HCLK
+ 1.5 ns
t
w(NOE)
FSMC_NOE low time 4T
HCLK
– 1 4T
HCLK
+ 2 ns
t
h(NE_NOE)
FSMC_NOE high to FSMC_NE high hold time –1 ns
t
v(A_NE)
FSMC_NEx low to FSMC_A valid 0 ns
t
v(NADV_NE)
FSMC_NEx low to FSMC_NADV low 3 5 ns
t
w(NADV)
FSMC_NADV low time T
HCLK
–1.5 T
HCLK
+ 1.5 ns
t
h(AD_NADV)
FSMC_AD (address) valid hold time after
FSMC_NADV high
T
HCLK
ns
t
h(A_NOE)
Address hold time after FSMC_NOE high T
HCLK
ns
Table 32. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings
(1)(2)
Symbol Parameter Min Max Unit
NBL
Data
FSMC_NBL[1:0]
FSMC_
AD[15:0]
t
v(BL_NE)
t
h(Data_NE)
Address
FSMC_A[25:16]
t
v(A_NE)
FSMC_NWE
t
v(A_NE)
ai14892b
Address
FSMC_NADV
t
v(NADV_NE)
t
w(NADV)
t
su(Data_NE)
t
h(AD_NADV)
FSMC_NE
FSMC_NOE
t
w(NE)
t
w(NOE)
t
v(NOE_NE)
t
h(NE_NOE)
t
h(A_NOE)
t
h(BL_NOE)
t
su(Data_NOE)
t
h(Data_NOE)