Datasheet

STM32F101xF, STM32F101xG Electrical characteristics
Doc ID 17143 Rev 2 55/108
Low-speed internal (LSI) RC oscillator
Wakeup time from low-power mode
The wakeup times given in Tabl e 2 7 are measured on a wakeup phase with an 8-MHz HSI
RC oscillator. The clock source used to wake up the device depends from the current
operating mode:
● Stop or Standby mode: the clock source is the RC oscillator
● Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and V
DD
supply
voltage conditions summarized in Ta bl e 1 0 .
2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from
the ST website www.st.com.
3. Guaranteed by design, not tested in production.
4. Based on characterization, not tested in production.
Table 26. LSI oscillator characteristics
(1)
1. V
DD
= 3 V, T
A
= –40 to 85 °C unless otherwise specified.
Symbol Parameter Min Typ Max Unit
f
LSI
(2)
2. Based on characterization, not tested in production.
Frequency 30 40 60 kHz
t
su(LSI)
(3)
3. Guaranteed by design, not tested in production.
LSI oscillator startup time 85 µs
I
DD(LSI)
(3)
LSI oscillator power consumption 0.65 1.2 µA
Table 27. Low-power mode wakeup timings
Symbol Parameter Typ Unit
t
WUSLEEP
(1)
1. The wakeup times are measured from the wakeup event to the point at which the user application code
reads the first instruction.
Wakeup from Sleep mode 1.8 µs
t
WUSTOP
(1)
Wakeup from Stop mode (regulator in run mode) 3.6
µs
Wakeup from Stop mode (regulator in low-power mode) 5.4
t
WUSTDBY
(1)
Wakeup from Standby mode 50 µs