Datasheet

Electrical characteristics STM32F101xF, STM32F101xG
38/108 Doc ID 17143 Rev 2
5.3 Operating conditions
5.3.1 General operating conditions
5.3.2 Operating conditions at power-up / power-down
The parameters given in Ta ble 1 1 are derived from tests performed under the ambient
temperature condition summarized in Table 1 0.
5.3.3 Embedded reset and power control block characteristics
The parameters given in Ta ble 1 2 are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in Table 10 .
Table 10. General operating conditions
Symbol Parameter Conditions Min Max Unit
f
HCLK
Internal AHB clock frequency 0 36
MHzf
PCLK1
Internal APB1 clock frequency 0 36
f
PCLK2
Internal APB2 clock frequency 0 36
V
DD
Standard operating voltage 2 3.6 V
V
DDA
(1)
1. When the ADC is used, refer to Table 55: ADC characteristics.
Analog operating voltage
(ADC not used)
Must be the same potential
as V
DD
(2)
2. It is recommended to power V
DD
and V
DDA
from the same source. A maximum difference of 300 mV
between V
DD
and V
DDA
can be tolerated during power-up and operation.
23.6
V
Analog operating voltage
(ADC used)
2.4 3.6
V
BAT
Backup operating voltage 1.8 3.6 V
P
D
Power dissipation at T
A
=
85 °C
(3)
3. If T
A
is lower, higher P
D
values are allowed as long as T
J
does not exceed T
J
max (see Table 6.2: Thermal
characteristics on page 104).
LQFP144 666
mWLQFP100 434
LQFP64 444
T
A Ambient temperature
Maximum power dissipation –40 85 °C
Low power dissipation
(4)
4. In low power dissipation state, T
A
can be extended to this range as long as T
J
does not exceed T
J
max (see
Table 6.2: Thermal characteristics on page 104).
–40 105 °C
T
J Junction temperature range –40 105 °C
Table 11. Operating conditions at power-up / power-down
Symbol Parameter Conditions Min Max Unit
t
VDD
V
DD
rise time rate 0

µs/V
V
DD
fall time rate 20
