Datasheet

Electrical characteristics STM32F101x8, STM32F101xB
34/90 DocID13586 Rev 16
5.3.2 Operating conditions at power-up / power-down
Subject to general operating conditions for T
A
.
Table 9. Operating conditions at power-up / power-down
5.3.3 Embedded reset and power control block characteristics
The parameters given in Table 10 are derived from tests performed under the ambient
temperature and V
DD
supply voltage conditions summarized in Table 8.
V
IN
I/O input voltage
Standard IO –0.3 V
DD
+ 0.3
VFT IO
(3)
2 V < V
DD
 3.6 V –0.3 5.5
V
DD
= 2 V –0.3 5.2
BOOT0 0 5.5
P
D
Power dissipation at T
A
= 85 °C
(4)
LQFP100 434
mW
LQFP64 444
LQFP48 363
UFQFPN48 624
VFQFPN36 1000
T
A Ambient temperature
Maximum power dissipation –40 85
°C Low power dissipation
(5)
–40 105
T
J Junction temperature range –40 105
1. When the ADC is used, refer to Table 42: ADC characteristics.
2. It is recommended to power V
DD
and V
DDA
from the same source. A maximum difference of 300 mV
between V
DD
and V
DDA
can be tolerated during power-up and operation.
3. To sustain a voltage higher than V
DD
+0.3 V, the internal pull-up/pull-down resistors must be disabled.
4. If T
A
is lower, higher P
D
values are allowed as long as T
J
does not exceed T
J
max (see Table 6.2: Thermal
characteristics on page 80).
5. In low power dissipation state, T
A
can be extended to this range as long as T
J
does not exceed T
J
max (see
Table 6.2: Thermal characteristics on page 80).
Table 8. General operating conditions (continued)
Symbol Parameter Conditions Min Max Unit
Symbol Parameter Conditions Min Max Unit
t
VDD
V
DD
rise time rate 0

µs/V
V
DD
fall time rate 20
