Datasheet

Electrical characteristics STM32F101x4, STM32F101x6
48/79 Doc ID 15058 Rev 5
5.3.9 Memory characteristics
Flash memory
The characteristics are given at T
A
= –40 to 85 °C unless otherwise specified.
Table 28. Flash memory endurance and data retention
5.3.10 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
t
LOCK
PLL lock time 200 µs
Jitter Cycle-to-cycle jitter 300 ps
1. Based on device characterization, not tested in production.
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by f
PLL_OUT
.
Table 26. PLL characteristics
Symbol Parameter
Value
Unit
Min
(1)
Typ Max
(1)
Table 27. Flash memory characteristics
Symbol Parameter Conditions Min
(1)
1. Guaranteed by design, not tested in production.
Typ Max
(1)
Unit
t
prog
16-bit programming time T
A
= –40 to +85 °C 40 52.5 70 µs
t
ERASE
Page (1 KB) erase time T
A
= –40 to +85 °C 20 40 ms
t
ME
Mass erase time T
A
= –40 to +85 °C 20 40 ms
I
DD
Supply current
Read mode
f
HCLK
= 36 MHz with 1 wait
state, V
DD
= 3.3 V
20 mA
Write / Erase modes
f
HCLK
= 36 MHz, V
DD
= 3.3 V
5mA
Power-down mode / Halt,
V
DD
= 3.0 to 3.6 V
50 µA
V
prog
Programming voltage 2 3.6 V
Symbol Parameter Conditions
Value
Unit
Min
(1)
1. Based on characterization not tested in production.
Typ Max
N
END
Endurance T
A
= –40 °C to 85 °C
10
kcycles
t
RET
Data retention
T
A
= 85 °C, 1 kcycle
(2)
2. Cycling performed over the whole temperature range.
30
Ye a r s
T
A
= 55 °C, 10 kcycle
(2)
20