Datasheet

STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB Electrical characteristics
Doc ID 16455 Rev 7 49/88
Figure 21. Typical application with a 32.768 kHz crystal
5.3.7 Internal clock source characteristics
The parameters given in Ta ble 23 are derived from tests performed under the ambient
temperature and V
DD
supply voltage conditions summarized in Table 8.
High-speed internal (HSI) RC oscillator
ai14129b
OSC32_OU T
OSC32_IN
f
LSE
C
L1
R
F
STM32F10xxx
32.768 KHz
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
C
L2
Table 23. HSI oscillator characteristics
(1)
1. V
DD
= 3.3 V, T
A
= –40 to 105 °C °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
f
HSI
Frequency 8 MHz
DuCy
(HSI)
Duty cycle 45 55 %
ACC
HSI
Accuracy of HSI oscillator
T
A
= –40 to 105 °C
(2)
2. Based on characterization, not tested in production.
-2.4 2.5 %
T
A
= –10 to 85 °C
(2)
-2.2 1.3 %
T
A
= 0 to 70 °C
(2)
-1.9 1.3 %
T
A
= 25 °C -1 1 %
t
su(HSI)
(3)
3. Guaranteed by design. Not tested in production
HSI oscillator startup time 1 2 µs
I
DD(HSI)
(3)
HSI oscillator power consumption 80 100 µA