Datasheet

Electrical characteristics STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
50/88 Doc ID 16455 Rev 7
Low-speed internal (LSI) RC oscillator
Wakeup time from low-power mode
The wakeup times given in Table 2 5 are measured on a wakeup phase with an 8-MHz HSI
RC oscillator. The clock source used to wake up the device depends from the current
operating mode:
● Stop or Standby mode: the clock source is the RC oscillator
● Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under the ambient temperature and V
DD
supply
voltage conditions summarized in Ta bl e 8.
Table 24. LSI oscillator characteristics
(1)
1. V
DD
= 3 V, T
A
= –40 to 105 °C °C unless otherwise specified.
Symbol Parameter Min Typ Max Unit
f
LSI
Frequency 30 40 60 kHz
f
LSI(T)
Temperature-related frequency drift
(2)
2. Based on characterization, not tested in production.
-9 9 %
t
su(LSI)
(3)
3. Guaranteed by design, not tested in production.
LSI oscillator startup time 85 µs
I
DD(LSI)
(3)
LSI oscillator power consumption 0.65 1.2 µA
Table 25. Low-power mode wakeup timings
Symbol Parameter Typ Unit
t
WUSLEEP
(1)
1. The wakeup times are measured from the wakeup event to the point at which the user application code
reads the first instruction.
Wakeup from Sleep mode 1.8 µs
t
WUSTOP
(1)
Wakeup from Stop mode (regulator in run mode) 3.6
µs
Wakeup from Stop mode (regulator in low-power mode) 5.4
t
WUSTDBY
(1)
Wakeup from Standby mode 50 µs