Datasheet

STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB Electrical characteristics
Doc ID 16455 Rev 7 47/88
Figure 20. Typical application with an 8 MHz crystal
1. R
EXT
value depends on the crystal characteristics.
Table 21. HSE 4-24 MHz oscillator characteristics
(1)(2)
1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
2. Based on characterization, not tested in production.
Symbol Parameter Conditions Min Typ Max Unit
f
OSC_IN
Oscillator frequency 4 8 24 MHz
R
F
Feedback resistor 200 k
C
L1
C
L2
(3)
3. It is recommended to use high-quality external ceramic capacitors in the 5 pF to 25 pF range (typ.),
designed for high-frequency applications, and selected to match the requirements of the crystal or
resonator. C
L1
and C
L2,
are usually the same size. The crystal manufacturer typically specifies a load
capacitance which is the series combination of C
L1
and C
L2
. PCB and MCU pin capacitance must be
included (10 pF can be used as a rough estimate of the combined pin and board capacitance) when sizing
C
L1
and C
L2
.
Recommended load capacitance
versus equivalent serial
resistance of the crystal (R
S
)
(4)
4. The relatively low value of the RF resistor offers a good protection against issues resulting from use in a
humid environment, due to the induced leakage and the bias condition change. However, it is
recommended to take this point into account if the MCU is used in tough humidity conditions.
R
S
= 30 30 pF
i
2
HSE driving current
V
DD
= 3.3 V
V
IN
= V
SS
with 30 pF
load
1mA
g
m
Oscillator transconductance Startup 25 mA/V
t
SU(HSE)
(5)
5. t
SU(HSE)
is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer
Startup time V
DD
is stabilized 2 ms
ai14128b
OSC_OU T
OSC_IN
f
HSE
C
L1
R
F
STM32F10xxx
8 MHz
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
R
EXT
(1)
C
L2