Datasheet

Electrical characteristics STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
34/88 Doc ID 16455 Rev 7
Note: It is recommended to power V
DD
and V
DDA
from the same source. A maximum difference of
300 mV between V
DD
and V
DDA
can be tolerated during power-up and operation.
5.3.2 Operating conditions at power-up / power-down
Subject to general operating conditions for T
A
.
Table 9. Operating conditions at power-up / power-down
5.3.3 Embedded reset and power control block characteristics
The parameters given in Ta ble 10 are derived from tests performed under the ambient
temperature and V
DD
supply voltage conditions summarized in Table 8.
P
D
Power dissipation at T
A
=
85 °C for suffix 6 or T
A
=
105 °C for suffix 7
(2)
LQFP100 434
mW
LQFP64 444
TFBGA64 308
LQFP48 363
T
A
Ambient temperature for 6
suffix version
Maximum power dissipation –40 85
°C
Low power dissipation
(3)
–40 105
Ambient temperature for 7
suffix version
Maximum power dissipation –40 105
°C
Low power dissipation
(3)
–40 125
T
J Junction temperature range
6 suffix version –40 105
°C
7 suffix version –40 125
1. When the ADC is used, refer to Table 42: ADC characteristics.
2. If T
A
is lower, higher P
D
values are allowed as long as T
J
does not exceed T
J
max (see Table 6.2: Thermal
characteristics on page 81).
3. In low power dissipation state, T
A
can be extended to this range as long as T
J
does not exceed T
J
max (see
Table 6.2: Thermal characteristics on page 81).
Table 8. General operating conditions (continued)
Symbol Parameter Conditions Min Max Unit
Symbol Parameter Min Max Unit
t
VDD
V
DD
rise time rate 0

µs/V
V
DD
fall time rate 20
