Datasheet

STM32F051x Electrical characteristics
Doc ID 022265 Rev 3 67/105
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
6.3.11 Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 46. EMI characteristics
Symbol Parameter Conditions
Monitored
frequency band
Max vs. [f
HSE
/f
HCLK
]
Unit
8/48 MHz
S
EMI
Peak level
V
DD
= 3.6 V, T
A
= 25 °C,
LQFP64 package
compliant with IEC
61967-2
0.1 to 30 MHz -3
dBµV30 to 130 MHz 28
130 MHz to 1GHz 23
SAE EMI Level 4 -
Table 47. ESD absolute maximum ratings
Symbol Ratings Conditions Class Maximum value
(1)
1. Data based on characterization results, not tested in production.
Unit
V
ESD(HBM)
Electrostatic discharge
voltage (human body model)
T
A
= +25 °C, conforming
to JESD22-A114
22000
V
V
ESD(CDM)
Electrostatic discharge
voltage (charge device model)
T
A
= +25 °C, conforming
to JESD22-C101
II 500